The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
May. 30, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yu-Ying Lai, Changhua County, TW;
PO-Chih Su, New Taipei, TW;
Yu-Ting Wei, New Taipei, TW;
Ruey-Hsin Liu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A high-voltage device includes a substrate, a gate structure over the substrate, a drain region disposed on a first side of the gate structure, a plurality of source regions disposed on a second side of the gate structure, and a plurality of doped regions disposed on the second side of the gate structure. The gate structure includes a plurality of first portions and a plurality of second portions alternately arranged. Width of the first portions are greater than widths of the second portions. The source regions are adjacent to the first portions of the gate structures, and the doped regions are adjacent to the second portions of the gate structure. The drain region and the source regions include dopants of a first conductivity type, and the doped regions include dopants of a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.