The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 27, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Haibo Lei, Shanghai, CN;
Guangcai Fu, Shanghai, CN;
Qi Shao, Shanghai, CN;
Binbin Zha, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a method for manufacturing a metal zero layer, comprising: step, etching a zero interlayer film to form a first trench; step, performing first Ge ion implantation to form a first Ge layer in the zero interlayer film and achieve first amorphization; step, performing second Ge ion implantation to form a second Ge layer in the zero interlayer film and achieve second amorphization, wherein the depth of the second Ge layer is greater than the depth of the first Ge layer, and the second Ge ion implantation is tilt ion implantation; step, forming a metal silicide layer on the surface of an amorphous silicon layer in a self-aligned manner; step, filling the first trench with a first metal layer; and step, performing chemical mechanical polishing to fully remove the first metal layer outside the first trench and achieve planarization.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile