The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jun. 23, 2021
Applicant:

Soitec, Bernin, FR;

Inventors:

Bruno Clemenceau, Bernin, FR;

Ludovic Ecarnot, Bernin, FR;

Aymen Ghorbel, Bernin, FR;

Marcel Broekaart, Bernin, FR;

Daniel Delprat, Bernin, FR;

Séverin Rouchier, Bernin, FR;

Stephane Thieffry, Bernin, FR;

Carine Duret, Bernin, FR;

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/02274 (2013.01); H01L 21/6835 (2013.01);
Abstract

A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.


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