The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jan. 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
PO-Tang Tseng, Hsinchu, TW;
Ching-Heng Yen, Hsinchu, TW;
Tai-Kun Kao, Hsinchu, TW;
Sheng-Tai Peng, Hsinchu, TW;
Chun Yan Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An ion source head includes a curved liner that is configured to more closely and accurately repel, direct, or deflect ion species generated within an ion source cavity of an ion source container of an ion source head towards an ion beam opening that extends through the ion source container of the ion source head. This prevents or reduces the ion species from becoming trapped in the ion source cavity instead of exiting the ion source cavity through the ion beam opening that extends through the ion source container of the ion source head. The curved liner may be received by a curved structure of the ion source container of the ion source head. The ion source head may be utilized within an implanter tool to refine or process a solid target with the ion beam generated by the ion source head with the curved liner.