The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Aug. 29, 2022
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Liyang Zhang, Suzhou, CN;

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/832 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/835 (2025.01); H10H 20/032 (2025.01);
Abstract

Disclosed are an optoelectronic device and a preparation method thereof. The optoelectronic device includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer, and the second semiconductor layer is provided with a layer of nano-diamond structure, and the nano-diamond structure has the same conductivity type as the second semiconductor layer. The method for preparing the optoelectronic device is used to make the optoelectronic device. In the present application, by providing a layer of nano-diamond structure in the second semiconductor layer, the absorption of UV light emitted by the active layer can be effectively avoided, and the beneficial effect of greatly improving the light extraction efficiency of the UV LED can be achieved.


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