The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Aug. 08, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien Yao Huang, Hsinchu, TW;

Wun-Jie Lin, Hsinchu, TW;

Kuo-Ji Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G06F 30/392 (2020.01); H01L 21/265 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/90 (2025.01); H10D 89/10 (2025.01); G06F 117/02 (2020.01);
U.S. Cl.
CPC ...
H10D 84/907 (2025.01); G06F 30/392 (2020.01); H01L 21/26513 (2013.01); H10D 84/0167 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01); H10D 89/10 (2025.01); G06F 2117/02 (2020.01); H10D 84/991 (2025.01);
Abstract

A method includes forming, over a substrate, a plurality of well taps arranged at intervals in a first direction and a second direction transverse to the first direction. The plurality of well taps is arranged at intervals in a first direction and a second direction transverse to the first direction. The plurality of well taps includes at least one first well tap. The forming the plurality of well taps comprises forming the first well tap by forming a first well region of a first type. The first well region comprises two first end areas and a first middle area arranged consecutively between the two first end areas in the second direction. The forming the first well tap further comprises implanting, in the first middle area, a first dopant of a first type, and implanting, in the first end areas, a second dopant of a second type different from the first type.


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