The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 15, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Yu Lin, Hsinchu, TW;
Yi-Han Wang, Hsinchu, TW;
Chun-Fu Cheng, Hsinchu, TW;
Cheng-Yin Wang, Hsinchu, TW;
Yi-Bo Liao, Hsinchu, TW;
Szuya Liao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An integrated circuit includes a complimentary field effect transistor (CFET). The CFET includes a first transistor having a first semiconductor nanostructure corresponding to a channel region of the first semiconductor nanostructure and a first gate metal surrounding the second semiconductor nanostructure. The CFET includes a transistor including a second semiconductor nanostructure above the first semiconductor nanostructure and a second gate metal surrounding the second semiconductor nanostructure. The CFET includes an isolation structure between the first and second semiconductor nanostructures.