The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Sep. 22, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Semyeong Jang, Hefei, CN;
Joonsuk Moon, Hefei, CN;
Deyuan Xiao, Hefei, CN;
Minki Hong, Hefei, CN;
Kyongtaek Lee, Hefei, CN;
Jo-Lan Chin, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate, first gate structures, second gate structures, and a covering layer. The substrate includes semiconductor channels spaced apart from each other and arranged at a top portion of the substrate and extending in a vertical direction. Each first gate structure is arranged in a first area of a respective semiconductor channel and is arranged around the respective semiconductor channel. Each second gate structure is arranged in a second area of a respective semiconductor channel and includes a ring structure and at least one bridge structure. The covering layer is arranged in a spaced area between any two adjacent semiconductor channels. The covering layer includes first interconnecting holes extending in the vertical direction.