The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Feb. 05, 2020
Applicant:
Ishihara Chemical Co., Ltd., Kobe, JP;
Inventors:
Takahiro Tanaka, Kobe, JP;
Hironori Yamada, Kobe, JP;
Daiki Takase, Kobe, JP;
Masaru Hatabe, Kobe, JP;
Assignee:
ISHIHARA CHEMICAL CO., LTD., Kobe, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 35/26 (2006.01); B32B 15/01 (2006.01); B32B 15/04 (2006.01); B32B 15/20 (2006.01); C22C 13/00 (2006.01); C22C 19/00 (2006.01); C22C 19/03 (2006.01); C23C 28/02 (2006.01); C23C 30/00 (2006.01); C25D 5/12 (2006.01); C25D 5/50 (2006.01); C25D 7/12 (2006.01); H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); B23K 35/262 (2013.01); B32B 15/01 (2013.01); B32B 15/015 (2013.01); B32B 15/018 (2013.01); B32B 15/04 (2013.01); B32B 15/043 (2013.01); B32B 15/20 (2013.01); C22C 13/00 (2013.01); C22C 19/00 (2013.01); C22C 19/03 (2013.01); C23C 28/02 (2013.01); C23C 28/021 (2013.01); C23C 28/023 (2013.01); C23C 30/00 (2013.01); C23C 30/005 (2013.01); C25D 5/12 (2013.01); C25D 5/505 (2013.01); C25D 7/12 (2013.01); H01L 21/50 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05163 (2013.01); H01L 2224/05613 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05678 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); Y10T 428/12687 (2015.01); Y10T 428/12694 (2015.01); Y10T 428/12708 (2015.01); Y10T 428/12715 (2015.01); Y10T 428/12722 (2015.01); Y10T 428/12875 (2015.01); Y10T 428/12889 (2015.01); Y10T 428/1291 (2015.01); Y10T 428/12917 (2015.01); Y10T 428/12931 (2015.01); Y10T 428/12937 (2015.01); Y10T 428/12944 (2015.01);
Abstract
A structure includes an Sn layer or an Sn alloy layer formed above a substrate, and an under barrier metal formed between the substrate and the Sn layer or Sn alloy layer. The under barrier metal is an Ni alloy layer containing Ni, and at least one selected from W, Ir, Pt, Au, and Bi, and can sufficiently inhibit generation of an intermetallic compound through a reaction, caused due to metal diffusion of a metal contained in the substrate, between the metal and Sn contained in the Sn layer or Sn alloy layer.