The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Dec. 23, 2021
Intel Corporation, Santa Clara, CA (US);
Changyok Park, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuit structures having anti-fuse structures, and methods of fabricating integrated circuit structures having anti-fuse structures, are described. For example, an integrated circuit structure includes a first vertical stack of horizontal nanowires. A first gate structure is over the first vertical stack of horizontal nanowires, the first gate structure including a first gate dielectric and a first gate electrode completely surrounding a channel region of each nanowire of the first vertical stack of horizontal nanowires. The integrated circuit structure also includes a second vertical stack of horizontal nanowires. A second gate structure is over the second vertical stack of horizontal nanowires, the second gate structure including a second gate dielectric and a second gate electrode only partially surrounding a channel region of each nanowire of the second vertical stack of horizontal nanowires.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile