The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Sep. 03, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Yu Lai, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chi-Yu Lu, Hsinchu, TW;

Shang-Hsuan Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2023.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 25/0657 (2013.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01); H01L 2225/06544 (2013.01);
Abstract

A semiconductor device includes a substrate, a first cell having a first functionality, and a second cell having a second functionality. The first cell includes a first portion on a first side of the substrate, wherein the first portion includes a first conductive element; a second portion on a second side of the substrate, wherein the second portion includes a second conductive element; and a first conductive via extending through the substrate and electrically connecting the first conductive element to the second conductive element. The second cell includes a third portion on the first side of the substrate, wherein the third portion includes a third conductive element; a fourth portion on the second side of the substrate, wherein the fourth portion includes a fourth conductive element; and a second conductive via extending through the substrate and electrically connecting the third conductive element to the fourth conductive element.


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