The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jan. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yung-Yao Lee, Zhubei, TW;

Yung-Hsiang Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); C09D 179/08 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G03F 7/162 (2013.01); C09D 179/08 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01);
Abstract

A method and corresponding spin coater is provided for forming a layer of uniform thickness on a semiconductor wafer having a central region and an outer edge. The method includes: depositing a flowable coating material on the semiconductor wafer at the central region, the layer being formed from the coating material; rotating the semiconductor wafer about an axis such that a centrifugal force urges the coating material to spread from the central region toward the outer edge of the semiconductor wafer; and creating a pressure differential in one or more regions proximate to the outer edge of the semiconductor wafer. The pressure differential may be created by a wall with pins holes, the wall at least partially encircling the outer edge of the semiconductor wafer.


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