The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Mar. 17, 2021
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Xiaobo Shi, Chandler, AZ (US);

James A. Schlueter, Phoenix, AZ (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C23F 3/06 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C23F 3/06 (2013.01); H01L 21/3212 (2013.01); C09G 1/02 (2013.01);
Abstract

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid, an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.


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Shi, Xiaobo. (2026). Barrier chemical mechanical planarization slurries for cobalt films (U.S. Patent No. 12516421). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12516421

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