The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 10, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yongyue Chen, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
This application discloses a method for making an elevated source-drain structure of a PMOS in an FDSOI process, including: Stepforming a gate structure of a PMOS on an FDSOI substrate; Stepforming an elevated source-drain structure, further including: Stepforming a seed layer; Stepforming a bulk layer, the bulk layer being a B—Ge-doped Si epitaxial layer. Stepforming a first cap layer and a second cap layer in sequence, the first cap layer being a B-doped Si epitaxial layer, the second cap layer being a Si epitaxial layer; Stepperforming a thermal oxidation process to form a top oxide layer and diffuse B impurities from the first cap layer into the bulk layer, the seed layer and the bottom semiconductor substrate; Stepremoving the top oxide layer; and Stepforming a third cap layer.