The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Sep. 25, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Travis W. Lajoie, Forest Grove, OR (US);

Pei-Hua Wang, Beaverton, OR (US);

Gregory J. George, Beaverton, OR (US);

Bernhard Sell, Portland, OR (US);

Juan G. Alzate-Vinasco, Tigard, OR (US);

Chieh-Jen Ku, Portland, OR (US);

Alekhya Nimmagadda, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/62 (2025.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/62 (2025.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/443 (2013.01); H10B 12/05 (2023.02); H10B 12/315 (2023.02); H10D 30/6729 (2025.01); H10D 30/6756 (2025.01); H10D 62/402 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
Abstract

Described herein are integrated circuit devices with semiconductor devices and interconnects coupled to contacts of the semiconductor devices, where the interconnects have tungsten liners between a fill material of the interconnect and the contacts. Interconnect liners can help maintain conductivity between semiconductor devices (e.g., transistors) and the interconnects that conduct current to and from the semiconductor devices. Tungsten liners may be in combination with semiconductor devices that use certain channel materials, such as indium gallium zinc oxide.


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