The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jun. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Chun-Yen Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 30/6219 (2025.01);
Abstract

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary manufacturing method includes patterning a top portion of a substrate, thereby forming a fin-like structure protruding from the substrate, forming a dummy gate structure across the fin-like structure, the dummy gate structure being directly above the first portion and the second portion of the fin-like structure, recessing the fin-like structure with the dummy gate structure as an etch mask, thereby forming recesses on both sides of the dummy gate structure, growing epitaxial features in the recesses, and replacing the dummy gate structure with a metal gate structure. The fin-like structure has a first portion with a first width and a second portion with a second width that is smaller than the first width. The metal gate structure engages both the first portion and the second portion of the fin-like structure.


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