The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Aug. 28, 2023
Applicant:

Enkris Semiconductor, Inc., Jiangsu, CN;

Inventor:

Liyang Zhang, Jiangsu, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H10H 20/819 (2025.01); H10H 29/80 (2025.01); H10H 29/85 (2025.01);
U.S. Cl.
CPC ...
H01L 25/0756 (2013.01); H01L 25/0753 (2013.01); H10H 20/819 (2025.01); H10H 29/857 (2025.01); H10H 29/962 (2025.01);
Abstract

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes a driving substrate, a first epitaxial structure coupled to the driving substrate, and a second epitaxial structure coupled to the first epitaxial structure, where the driving substrate is selectively coupled to a first semiconductor layer and a second semiconductor layer of the first epitaxial structure, and a third semiconductor layer and a fourth semiconductor layer of the second epitaxial structure by metal electrodes to independently control the first epitaxial structure and the second epitaxial structure.


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