The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jul. 22, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H10D 64/01 (2025.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0228 (2013.01); H01L 21/3105 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/3115 (2013.01); H01L 21/32051 (2013.01); H01L 21/321 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H10D 64/01 (2025.01); H01L 21/32 (2013.01);
Abstract
A method includes forming a metal layer over a substrate; forming a dielectric layer over the metal layer; performing a plasma treatment to a first portion of the dielectric layer, such that a carbon concentration of the first portion of the dielectric layer is lower than a carbon concentration of a second portion of the dielectric layer; selectively forming an inhibitor over the first portion of the dielectric layer; and selectively forming a hard mask over portions of the metal layer that is uncovered by the inhibitor.