The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Aug. 08, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Shunsuke Teranishi, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02315 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68381 (2013.01);
Abstract

In a processing method of a wafer having a front surface and a back surface on a side opposite to the front surface, a support substrate having a support surface that supports the wafer is provided, a hydrophilic treatment is performed on at least one of the front surface of the wafer or the support surface of the support substrate, the front surface of the wafer and the support surface of the support substrate are brought to face each other and are joined together to form a joined wafer, the joined wafer is heated to a first temperature, the wafer included in the joined wafer is processed from a side of the back surface, the joined wafer is heated to a second temperature higher than the first temperature, and the wafer is then separated from the support substrate.


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