The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

May. 24, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chih-Tsung Shih, Hsinchu, TW;

Hau-Yan Lu, Hsinchu, TW;

Wei-Kang Liu, Taichung, TW;

Yingkit Felix Tsui, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/122 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/132 (2013.01); G02B 6/1223 (2013.01); G02B 2006/12061 (2013.01);
Abstract

A method for forming an optical waveguide structure includes following operations. A substrate is received. A semiconductor layer is formed on the substrate. The semiconductor layer is patterned to form at least a waveguide in the substrate and at least a trench in the semiconductor layer. A first gap-filling operation is performed to form a first dielectric portion in the trench. A second gap-filling operation is performed to form a second dielectric portion over the first dielectric portion. An air seam is sealed within the second dielectric portion. A third gap-filling operation is performed to form a third dielectric portion over the second dielectric portion.


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