The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jan. 04, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;

Inventors:

Chung-Yi Lin, Hsinchu, TW;

Yueh-Chuan Lee, Hsinchu, TW;

Chia-Chan Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H04N 25/532 (2023.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H04N 25/532 (2023.01); H10F 39/014 (2025.01); H10F 39/8037 (2025.01); H10F 39/8057 (2025.01);
Abstract

A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; and a shield formed over the storage node which inhibits light from reaching the storage node, the shield including an extension which protrudes into the substrate and surrounds an outer periphery of the storage node.


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