The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
May. 20, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Chang Chien, Hsinchu County, TW;
Jung-I Lin, Hsinchu, TW;
Ming-Chieh Hsu, Hsinchu, TW;
Kuan-Chieh Huang, Hsinchu, TW;
Tzu-Jui Wang, Fengshan, TW;
Shih-Min Huang, Hsinchu County, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Yi-Shin Chu, Hsinchu, TW;
Hsiang-Lin Chen, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.