The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Feb. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi-Wen Chang, Hsinchu, TW;
Jui-Feng Kuan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes determining a first scaling factor for a first region of a first device layout, wherein the first region comprises a first plurality of conductive patterns. The method further includes determining a second scaling factor for a second region of the first device layout, wherein the second region comprises a second plurality of conductive patterns, and the first device layout comprises an interconnect pattern extending from the first region to the second region. The method further includes generating a second device layout. Generating the second device layout includes adjusting the interconnect pattern based on the first scaling factor and the second scaling factor.