The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jun. 29, 2023
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Da Li, Newark, CA (US);
Ji Yeon Kim, Fremont, CA (US);
Samantha S.H. Tan, Newark, CA (US);
Timothy William Weidman, Sunnyvale, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 (2006.01); G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
G03F 7/36 (2013.01); G03F 7/0043 (2013.01); G03F 7/168 (2013.01); G03F 7/422 (2013.01);
Abstract
Provided are processes for development of photopatterned metal or metal oxide-based thin film photoresists post-EUV exposure for removal of non-volatile species and deterring etch stop. Repeated cycles of alternating treatment with an etchant and an oxidizing agent; or treatment with an etchant followed by treatment with a wash agent are effective techniques for removal of the undesired unexposed portion of a photoresist.