The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Sep. 23, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Changwan Lee, Daejeon, KR;
Kyungeun Lee, Suwon-si, KR;
Hakjoon Lee, Seoul, KR;
Sungkyu Kang, Hwaseong-si, KR;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/045 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/76837 (2013.01);
Abstract
A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.