The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Nov. 27, 2020
Applicant:

Enkris Semiconductor, Inc., Jiangsu, CN;

Inventors:

Zhizhong Guo, Jiangsu, CN;

Liyang Zhang, Jiangsu, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8142 (2025.01); H10H 20/018 (2025.01); H10H 20/032 (2025.01);
Abstract

A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form first reflectors in the openings of the dielectric layer; growing a light-emitting structure on the side of each first reflector away from the substrate; and forming a second reflector on the side of the light-emitting structure away from the first reflector. The manufacturing process can be simplified.


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