The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jun. 10, 2021
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Michael Gehmlich, Weissenborn, DE;
Gudrun Kissinger, Lebus, DE;
Karl Mangelberger, Ach, AT;
Timo Mueller, Burghausen, DE;
Michael Skrobanek, Freiberg, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); C30B 1/00 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
C30B 33/02 (2013.01); C30B 1/00 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01); H01L 21/3225 (2013.01); H01L 21/324 (2013.01);
Abstract
A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5×10AT/cm(new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;