The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jul. 11, 2023
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Hung-Yu Wei, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/25 (2023.01);
U.S. Cl.
CPC ...
H10B 20/25 (2023.02);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a first source/drain region and a second source/drain region disposed within the substrate, and a gate structure disposed on the substrate and between the first source/drain region and the second source/drain region. The semiconductor device further includes an interlayer dielectric layer disposed over the first source/drain region, the second source/drain region, and the gate structure. The interlayer dielectric layer includes a second trench extending into the second source/drain region. The semiconductor device further includes a dielectric layer disposed in the second trench, and a second source/drain contact disposed over the second source/drain region and filling the remaining portion of the second trench.


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