The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jun. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Meng-Hsien Li, Hsinchu, TW;

Ying-Hsin Hung, Hsinchu, TW;

Yu-Shan Yeh, Hsinchu County, TW;

Li-Min Chen, Hsinchu County, TW;

Neng-Jye Yang, Hsinchu, TW;

Kuo-Bin Huang, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76846 (2013.01); H01L 21/76865 (2013.01); H01L 21/76895 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor structure includes a semiconductor substrate, a dielectric layer, a tungsten plug, a conductive plug, and a contact barrier. The dielectric layer is over a semiconductor substrate. The tungsten plug is in the dielectric layer. The conductive plug is on the tungsten plug. The contact barrier includes a sidewall barrier on a sidewall of the conductive plug and a bottom barrier between the conductive plug and the tungsten plug. A thickness of the sidewall barrier is greater than a thickness of the bottom barrier.


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