The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Apr. 17, 2023
Enkris Semiconductor, Inc., Suzhou, CN;
Kai Cheng, Suzhou, CN;
Liyang Zhang, Suzhou, CN;
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
Disclosed is a graphite disc solving a problem of poor performance uniformity of the epitaxial wafer, which is obtained during material epitaxial growth by using the graphite disc. The graphite disc includes a graphite disc body, where the graphite disc body includes a groove and a plurality of projections on a bottom wall of the groove, and the plurality of projections divide the groove into a plurality of independent regions. According to the graphite disc provided by the present disclosure, a plurality of regions are defined in the groove by using the projections, each region corresponds to one substrate, and different regions are interconnected. Compared with the graphite disc structure with one groove corresponding to one substrate in the related art, a space for gas flow is enlarged, therefore a problem that an edge of the epitaxial wafer is too thick caused by gas flow is alleviated.