The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jul. 15, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chen Chang, Hsinchu County, TW;

Chien-Wen Lai, Hsinchu, TW;

Chih-Min Hsiao, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 21/02021 (2013.01); H01L 21/02043 (2013.01); H01L 21/304 (2013.01); H01L 25/0657 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A method includes bonding a front side surface of a first wafer to a front side of a second wafer; forming a bonding material on a periphery of the first wafer and a periphery of the second wafer; performing a thinning process on the first wafer from a back side surface of the first wafer; after performing the thinning process, performing a trimming process from the back side surface of the first wafer to remove a first portion of the bonding material and partially trim down the periphery of the second wafer from a front side surface of the second wafer.


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