The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Aug. 29, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chao-Han Cheng, San Jose, CA (US);

Lei Zhang, Bukit Timah, SG;

Srinivasa Reddy Kunduru, Bukit Panjang, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0634 (2013.01); G06F 3/0679 (2013.01);
Abstract

A wake up cadence at which the memory device is to wake up during a low power mode is determined. Based on the wake up cadence, a processing device determines a finite number of pages of the memory device to be scanned per wake up during the low power mode to satisfy a criterion for memory device qualification, the criterion being associated with the memory device's data retention capability. Upon detecting the low power mode, a burst scan operation is performed to scan the finite number of pages in the memory device each time the memory device wakes up at the determined cadence.


Find Patent Forward Citations

Cheng, Chao-Han. (2025). Memory sub-system initiated burst scan under low power mode (U.S. Patent No. 12493416). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12493416

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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