Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a semiconductor substrate, at least two source/drain features, at least two source/drain features, one or more channel layers, a gate structure, a first conductive feature, a second conductive feature, and an alignment mark. The semiconductor substrate has a first region and a second region next to the first region. The at least two source/drain features are disposed in the second region and are laterally arranged to each other. The one or more channel layers are disposed in the second region and connect the at least two source/drain features. The gate structure is disposed in the second region and engages the one or more channel layers and interposes the at least two source/drain features. The first conductive feature is disposed in the second region and is electrically coupled to the at least two source/drain features. The second conductive feature is disposed in the second region and is electrically coupled to the at least two source/drain features through the first conductive feature. The alignment mark is disposed in the first region and includes a first dielectric feature and a third conductive feature lining a bottom and a sidewall of the first dielectric feature.