The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Mar. 10, 2021
Lam Research Corporation, Fremont, CA (US);
Rui Takahashi, Fremont, CA (US);
Yilun Li, Newark, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Youn-Jin Oh, Danville, CA (US);
Wonjae Lee, Fremont, CA (US);
Leonid Belau, Pleasanton, CA (US);
Andrew Clark Serino, Oakland, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25 C or lower.