The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jan. 17, 2023
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Subhash Srinivas Pidaparthi, Santa Clara, CA (US);
Clifford Drowley, Santa Clara, CA (US);
Shahin Sharifzadeh, Santa Clara, CA (US);
Andrew P. Edwards, Santa Clara, CA (US);
Andrew Walker, Santa Clara, CA (US);
Francis Chai, Santa Clara, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A vertical fin-based field effect transistor (FinFET) device includes an array of FinFETs comprising a plurality of rows and columns of separated fins. Each of the separated fins has a length and a width measured laterally with respect to the length and includes a first fin tip disposed at a first end of the separated fin, a second fin tip disposed at a second end of the separated fin opposing the first end, a central region disposed between the first fin tip and the second fin tip and characterized by a first electrical conductivity, and a source contact electrically coupled to the central region. The first fin tip and the second fin tip are characterized by a second electrical conductivity less than the first electrical conductivity. The FinFET further includes a first gate region surrounding the first fin tip and a second gate region surrounding the second fin tip.