The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Apr. 08, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Aaron Chen, Singapore, SG;

Chi Ren, Singapore, SG;

Chao-Sheng Hsieh, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H10B 41/60 (2023.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H10B 41/60 (2023.02);
Abstract

An electrically erasable programmable read only memory (EEPROM) cell includes a first gate, a second gate and an erasing gate. The first gate and the second gate are disposed on a substrate, wherein the first gate includes a first floating gate and a first control gate stacked from bottom to top, and the second gate includes a second floating gate and a second control gate stacked from bottom to top. The erasing gate is sandwiched by the first gate and the second gate, wherein a side part of the first floating gate and a side part of the second floating gate right below the erasing gate both have multiple tips. The present invention also provides a method of forming the electrically erasable programmable read only memory (EEPROM) cell.


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