The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 21, 2024
SK Enpulse Co., Ltd., Pyeongtaek-si, KR;
Hyung-Joo Lee, Suwon-si, KR;
Kyuhun Kim, Suwon-si, KR;
Jiyeon Ryu, Suwon-si, KR;
Inkyun Shin, Suwon-si, KR;
Seong Yoon Kim, Suwon-si, KR;
Suk Young Choi, Suwon-si, KR;
Suhyeon Kim, Suwon-si, KR;
Sung Hoon Son, Suwon-si, KR;
Min Gyo Jeong, Suwon-si, KR;
SK enpulse Co., Ltd., Pyeongtaek-si, KR;
Abstract
A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 2θ of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 2θ of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1. XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.