The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

May. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin Yang Hung, Hsinchu, TW;

Wei-Syuan Dai, Hsinchu, TW;

Tsung-Yu Chiang, New Taipei, TW;

Lung Chen, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 62/13 (2025.01); H10D 62/832 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 62/151 (2025.01); H10D 62/832 (2025.01); H10D 64/017 (2025.01); H10D 84/017 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01);
Abstract

Semiconductor structure and methods of forming the same are provided. A semiconductor structure according to the present disclosure include a substrate that includes a first region and a second region adjacent the first region, a first fin disposed over the first region, a second fin disposed over the second region, a first source/drain feature disposed over the first fin and a second source/drain feature disposed over the second fin, and an isolation structure disposed between the first fin and the second fin. The isolation structure has a protruding feature rising above the rest of the isolation structure and the protruding feature is disposed between the first fin and the second fin.


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