The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 26, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are removed to expose a channel region of the fin structure. A surface of the channel region of the fin structure is cleaned. An interfacial layer is formed over the cleaned surface of the channel region of the fin structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile