The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Jul. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Inhyo Hwang, Asan-si, KR;

Younglyong Kim, Anyang-si, KR;

Hyunsoo Chung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/182 (2013.01);
Abstract

A semiconductor package includes a package substrate and a plurality of sub-packages provided on the package substrate. Each of the plurality of sub-packages includes a semiconductor chip, an interposer provided adjacent to the semiconductor chip, the interposer including a plurality of first through-silicon vias, an encapsulator provided between the semiconductor chip and the interposer, and a redistribution layer provided on the interposer, the encapsulator and the semiconductor chip. The semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite the first surface and a plurality of chip pads provided on the first surface. The redistribution layer includes a plurality of redistribution pads and a horizontal wiring provided between the plurality of redistribution pads and the plurality of first through-silicon vias. The redistribution layer is provided on the second surface of the semiconductor substrate, and extends on the encapsulator and the interposer.


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