The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 24, 2021
Intel Corporation, Santa Clara, CA (US);
Benjamin T. Duong, Phoenix, AZ (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Aleksandar Aleksov, Chandler, AZ (US);
Helme Castro De La Torre, Gilbert, AZ (US);
Kristof Darmawikarta, Chandler, AZ (US);
Darko Grujicic, Chandler, AZ (US);
Sashi S. Kandanur, Chandler, AZ (US);
Suddhasattwa Nad, Chandler, AZ (US);
Rengarajan Shanmugam, Chandler, AZ (US);
Thomas I. Sounart, Chandler, AZ (US);
Marcel A. Wall, Phoenix, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.