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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12476141 B1

PDFFull Text
Date of Patent:
Nov. 18, 2025

Filed:

Dec. 13, 2022

Fin field effect transistor (finfet) device structure with interconnect structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Che-Cheng Chang, New Taipei, TW;

Chih-Han Lin, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Steven B Gauthier

Assistant Examiner:

Lamont B Koo

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7685 (2013.01); H01L 21/76807 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The semiconductor device structure further includes an adhesion layer formed in the dielectric layer and over the first metal layer and a second metal layer formed in the dielectric layer. The second metal layer is electrically connected to the first metal layer, and a portion of the adhesion layer is formed between the second metal layer and the dielectric layer. The adhesion layer includes a first portion lining with a top portion of the second metal layer, and the first portion has an extending portion along a vertical direction.

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