The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Oct. 21, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Koei Ito, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32568 (2013.01); H01J 37/32458 (2013.01); H01J 37/32834 (2013.01);
Abstract

A plasma processing apparatus includes a substrate support, an upper electrode, an inner chamber, and an exhaust device in an outer chamber. The substrate support is provided in the outer chamber. The upper electrode is provided above the substrate support. The inner chamber defines a substrate processing space on the substrate support. The exhaust device is connected to an exhaust port provided at a bottom portion of the outer chamber. The inner chamber includes a ceiling portion and a sidewall portion. The ceiling portion extends on the substrate processing space, provides a plurality of gas holes, and configures a shower head together with the upper electrode. The sidewall portion extends in a peripheral direction to surround the substrate processing space and provides a plurality of through-holes. The sidewall portion has an opening area that increases along a direction from a lower end toward an upper end of the sidewall portion.


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