The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Mar. 12, 2024
Lam Research Corporation, Fremont, CA (US);
Younghee Lee, Pleasanton, CA (US);
Da Li, Newark, CA (US);
Hongxiang Zhao, San Jose, CA (US);
Ji Yeon Kim, Sunnyvale, CA (US);
Samantha S. H. Tan, Newark, CA (US);
Daniel Peter, Sunnyvale, CA (US);
Nader Shamma, Cupertino, CA (US);
Michelle Margarita Flores Espinosa, Union City, CA (US);
Jun Xue, Fremont, CA (US);
Patrick A. Van Cleemput, Castle Rock, WA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an Oflash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.