The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jun. 28, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Xuan Huang, Hsinchu, TW;

Ching-Wei Tsai, Hsinchu, TW;

Hou-Yu Chen, Zhubei, TW;

Kuan-Lun Cheng, Hsin-chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2025.01); H10D 62/10 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/0158 (2025.01); H10D 62/119 (2025.01); H10D 84/038 (2025.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes semiconductor material layers stacked above a substrate along a first direction and a gate structure wrapping around the semiconductor material layers. The semiconductor structure further includes an epitaxial structure coupled to the semiconductor material layers in a second direction that is different from the first direction and a SiGe-containing layer located below the epitaxial structure. In addition, a material of the SiGe-containing layer is different from a material of the epitaxial structure, the SiGe-containing layer comprises a first portion with a first thickness in the first direction, and a second portion with a second thickness in the first direction, and the second thickness is smaller than the first thickness.


Find Patent Forward Citations

Loading…