The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Aug. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuo-Chiang Tsai, Hsinchu, TW;

Tien-Hung Cheng, Hsinchu, TW;

Jeng-Ya Yeh, New Taipei, TW;

Mu-Chi Chiang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/62 (2025.01); H10D 64/01 (2025.01);
Abstract

A semiconductor device includes a source via having a body portion and a barrier layer surrounding the body portion, and the body portion is in physical contact with the source contact. Furthermore, the barrier layer includes at least one sidewall section separating the source via from an adjacent via structure. As such, the via to via leakage may be prevented. Overall, by providing a semiconductor device having the above structures, the contact resistance is reduced, and the device performance is further improved.


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