The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Aug. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 22/12 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: determining a first reflectivity of a first anneal region on a wafer; determining a second reflectivity of a second anneal region on the wafer, performing a first laser shot on the first anneal region, measuring a first temperature of the first anneal region, and performing a second laser shot on a second anneal region. A power of the first laser shot is set in accordance with the first reflectivity. A power of the second laser shot is set in accordance with the second reflectivity.