The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Apr. 03, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01);
Abstract
A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.