The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Feb. 03, 2021
Applicant:

Bühler Alzenau Gmbh, Alzenau, DE;

Inventors:

Steffen Guertler, Böhlen, DE;

Mario Berlinger, Leipzig, DE;

Ralf Sperling, Leipzig, DE;

Assignee:

Bühler Alzenau GmbH, Alzenau, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/304 (2006.01); G01B 11/06 (2006.01);
U.S. Cl.
CPC ...
H01J 37/304 (2013.01); G01B 11/0675 (2013.01); H01J 2237/30466 (2013.01);
Abstract

A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.


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