The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jun. 25, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Georgios Dogiamis, Chandler, AZ (US);
Qiang Yu, Saratoga, CA (US);
Adel Elsherbini, Tempe, AZ (US);
Kimin Jun, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01F 27/28 (2006.01); H01L 23/522 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H10D 1/20 (2025.01);
U.S. Cl.
CPC ...
H01F 27/2804 (2013.01); H01L 23/5227 (2013.01); H01L 23/645 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H10D 1/20 (2025.01);
Abstract
Methods and apparatus for inductor and transformer semiconductor devices using hybrid bonding technology are disclosed. An example semiconductor device includes a first standoff substrate; a second standoff substrate adjacent the first standoff substrate; and a conductive layer adjacent at least one of the first standoff substrate or the second standoff substrate.